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A Product Line of Diodes Incorporated
ZXTP718MA
20V PNP LOW SATURATION SWITCHING TRANSISTOR
Features and Benefits
* * * * * * * * * * * BVCEO > -20V IC = -3.5A Continuous Collector Current Low Saturation Voltage (-220mV max @ -1A) RSAT = 64 m for a low equivalent On-Resistance hFE specified up to -6A for high current gain hold up Low profile 0.6mm high package for thin applications RJA efficient, 60% lower than SOT23 2 4mm footprint, 50% smaller than SOT23 Lead-Free, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * Case: DFN2020B-3 Case Material: Molded Plastic. "Green" Molding Compound. Terminals: Pre-Plated NiPdAu leadframe. Nominal Package Height: 0.6mm UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Weight: 0.01 grams (approximate)
Applications
* * * * * MOSFET Gate Driving DC-DC Converters Charging Circuits Power switches Motor control
DFN2020B-3
C B
E
Top View
Bottom View
Device Symbol
Bottom View Pin-Out
Ordering Information
Product ZXTP718MATA ZXTP718MATC
Notes:
Marking S2 S2
Reel size (inches) 7 13
Tape width (mm) 8 8
Quantity per reel 3000 10000
1. No purposefully added lead. 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
Marking Information
S2
S2 = Product Type Marking code
Top View
ZXTP718MA
Document Number DS31939 Rev. 4 - 2
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A Product Line of Diodes Incorporated
ZXTP718MA
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current (Note 3) (Note 4) Symbol VCBO VCEO VEBO ICM IC IB Value -25 -20 -7 -6 -3.5 -4.0 -1 Unit V
A
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and Storage Temperature Range
Notes:
Symbol (Note 3) PD (Note 4) (Note 3) (Note 4) (Note 5) RJA RJL TJ, TSTG
Value 1.5 12 2.45 19.6 83 51 16.8 -55 to +150
Unit W mW/C
C/W C
3. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink. 4. Same as note (3), except the device is measured at t 5 sec. 5. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTP718MA
Document Number DS31939 Rev. 4 - 2
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December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTP718MA
Thermal Characteristics
2.0
Max Power Dissipation (W)
IC Collector Current (A)
10
VCE(SAT) Limited
1.5
1
10 sqcm Single 1oz Cu T amb=25C
DC 1s 100ms
1.0
0.1
10ms 1ms 100us Single Pulse, T amb=25C
0.5
0.01 0.1
0.0 0 25 50 75 100 125 150
1
10
VCE Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
225 80 60
D=0.5 10 sqcm Single 1oz Cu
Derating Curve
Thermal Resistance (C/W)
Thermal Resistance (C/W)
200 175 150 125 100 75 50 25 0 0.1 1
2oz copper 1oz copper
40 20
D=0.2 Single Pulse D=0.05 D=0.1
0 100
1m
10m 100m
1
10
100
1k
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
T amb=25C T j max=150C Continuous
Thermal Resistance v Board Area
PD Dissipation (W)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1
2oz copper
1oz copper
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ZXTP718MA
Document Number DS31939 Rev. 4 - 2
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(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTP718MA
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Static Forward Current Transfer Ratio (Note 6) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES hFE Min -25 -20 -7 300 300 150 15 150 Typ -35 -25 -8.5 475 450 230 30 -19 -170 -190 -240 -225 -0.87 -1.01 21 180 40 670 Max -100 -100 -100 -30 -220 -250 -350 -300 -0.95 -1.120 30 Unit V V V nA nA nA Test Condition IC = -100 A IC = -10 mA IE = -100 A VCB = -20V VEB = -6V VCES = -16V IC = -10mA, VCE = -2V IC = -100mA, VCE = -2V IC = -2A, VCE = -2V IC = -6A, VCE = -2V IC =- 0.1A, IB = -10mA IC = -1A, IB = -20mA IC = -1.5A, IB = -50mA IC = -2.5A, IB = -150mA IC = -3.5A, IB = -350mA IC = -3.5A, VCE = -2V IC = -3.5A, IB = -350mA VCB =-10V. f = 1MHz VCE = -10V, IC = -50mA, f = 100MHz VCC = -10V, IC = -1A IB1 = IB2 = -10mA
Collector-Emitter Saturation Voltage (Note 6) Base-Emitter Turn-On Voltage (Note 6) Base-Emitter Saturation Voltage (Note 6) Output Capacitance Transition Frequency Turn-On Time Turn-Off Time
Notes:
VCE(sat)
mV
VBE(on) VBE(sat) Cobo fT ton toff
V V pF MHz ns ns
6. Measured under pulsed conditions. Pulse width 300 s. Duty cycle 2%.
ZXTP718MA
Document Number DS31939 Rev. 4 - 2
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(c) Diodes Incorporated
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ZXTP718MA
Typical Electrical Characteristics
1
Tamb=25C
0.25
IC/IB=50
0.20
VCE(SAT) (V)
100m
IC/IB=100 IC/IB=50 IC/IB=10
VCE(SAT) (V)
100C
0.15 0.10 0.05 0.00 1m
25C -55C
10m
1m
IC Collector Current (A)
10m
100m
1
10
IC Collector Current (A)
10m
100m
1
10
VCE(SAT) v IC
1.4 1.2
100C VCE=2V
VCE(SAT) v IC
630 1.0
IC/IB=50
0.8 0.6 0.4 0.2 0.0 1m
25C
360 270
VBE(SAT) (V)
1.0
450
Typical Gain (hFE)
540
Normalised Gain
0.8
-55C
0.6
25C 100C
-55C
180 90
0.4 1m 10m 100m 1 10
10m
100m
1
0 10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
1.0 0.8
VCE=2V
VBE(SAT) v IC
VBE(ON) (V)
-55C
0.6
25C
0.4 0.2 1m
100C
IC Collector Current (A)
10m
100m
1
10
VBE(ON) v IC
ZXTP718MA
Document Number DS31939 Rev. 4 - 2
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December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTP718MA
Package Outline Dimensions
A3 A SEATING PLANE A1 D D2 Z L D4
E E2
E4
b e e
DFN2020B-3 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.152 b 0.20 0.30 0.25 D 1.95 2.075 2.00 D2 1.22 1.42 1.32 D4 0.56 0.76 0.66 e 0.65 E 1.95 2.075 2.00 E2 0.79 0.99 0.89 E4 0.48 0.68 0.58 L 0.25 0.35 0.30 Z 0.225 All Dimensions in mm
Suggested Pad Layout
X Y1
Y
G
X1 Y2 C
Dimensions C G X X1 Y Y1 Y2
Value (in mm) 1.30 0.24 0.35 1.52 1.09 0.47 0.50
ZXTP718MA
Document Number DS31939 Rev. 4 - 2
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December 2010
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXTP718MA
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. 2. B. are intended to implant into the body, or support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safetycritical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
ZXTP718MA
Document Number DS31939 Rev. 4 - 2
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December 2010
(c) Diodes Incorporated

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